Journal-clip

Charge Trapping States at the SiO2Oligothiophene Monolayer Interface in Field Effect Transistors Studied by Kelvin Probe Force Microscopy

Yingjie Zhang,†,‡ Dominik Ziegler,§ and Miquel Salmeron†

nn-2013-03750h_0005
↑ゲートをかけながらのKFM。

nn403750h

What do you think of this post?
  • Awesome (0)

Leave a Reply

Your email address will not be published. Required fields are marked *